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Analysis of Breakdown Voltages and Depletion Region Width of 4H-SiC Vertical Double Implanted MOSFET (ECE/EEE Project)

The semiconductor based electronic devices that can function at ambient temperatures higher than 1500C without external cooling system could greatly benefit a variety of application. When Silicon Power device work at a temperature above 2000C then it is problematic because of the self heating is increased, also the internal junction temperature and leakage increased. To work in high temperature with ease it is required Continue reading